Robust nanosized transistor effect in fullerene-tube heterostructure

Van der Waals Heterostructure Based Field Effect Transistor Application

Van der Waals heterostructure is formed by two-dimensional materials, which applications have become hot topics and received intensive exploration for fabricating without lattice mismatch. With the sustained decrease in dimensions of field effect transistors, van der Waals heterostructure plays an important role in improving the performance of devices because of its prominent electronic and opt...

A study of temperature field in a GaN heterostructure field-effect transistor

We propose in this paper a three-dimensional finite element based heat transfer model for a Gallium Nitride-based Heterostructure Field-Effect Transistor (henceforth referred to as GaN HFET). Analyses were carried out to study the distribution of temperature in the HFET under steady state conditions for two different steady-current inputs. Two different substrates for the HFET, sapphire and sil...

Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect transistor are derived from direct current transistor characteristics. The dependencies of mobility on gate bias, sheet carrier concentration, and temperature are obtained. For negative gate bias voltages, mobility is found to increase monotonically with increasing sheet carrier concentration,...

Surface charging and current collapse in an AlGaNâ‹ŁGaN heterostructure field effect transistor

Quantitative analysis of nanoscale electronic properties in an AlxGa1ÀxNÕGaN heterostructure field-effect transistor structure

Local dC/dV spectroscopy performed in a scanning capacitance microscope is used to map, quantitatively and with high spatial resolution, lateral variations in the threshold voltage of an AlxGa12xN/GaN heterostructure field-effect transistor epitaxial layer structure. Theoretical analysis and numerical simulations are used to quantify charge concentrations, the corresponding threshold voltage sh...